IXFN56N90P MOSFET Transistor

The IXFN56N90P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN56N90P transistor as follows.

IXFN56N90P Transistor Specification

Transistor Code		IXFN56N90P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.145Ohm
Power Dissipation (Maximum)	PD	1000W
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		375nC

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