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IXFN55N50F MOSFET Transistor

The IXFN55N50F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN55N50F transistor as follows.

Circuit diagram symbol of the IXFN55N50F transistor

IXFN55N50F Transistor Specification

Transistor Code IXFN55N50F
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-227B
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 55A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.085Ohm
Power Dissipation (Maximum) PD 600W
Drain-Source Capacitance 1250pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 5.5V

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