IXFN48N55 MOSFET Transistor

The IXFN48N55 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN48N55 transistor as follows.

IXFN48N55 Transistor Specification

Transistor Code		IXFN48N55
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	550V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	600W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		330nC

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