IXFN44N100Q3 MOSFET Transistor

The IXFN44N100Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN44N100Q3 transistor as follows.

IXFN44N100Q3 Transistor Specification

Transistor Code		IXFN44N100Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.22Ohm
Power Dissipation (Maximum)	PD	960W
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		264nC

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