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IXFN420N10T MOSFET Transistor

The IXFN420N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN420N10T transistor as follows.

Circuit diagram symbol of the IXFN420N10T transistor

IXFN420N10T Transistor Specification

Transistor Code IXFN420N10T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO227
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 420A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0023Ohm
Power Dissipation (Maximum) PD 1070W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 670nC

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