IXFN360N15T2 MOSFET Transistor

The IXFN360N15T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN360N15T2 transistor as follows.

IXFN360N15T2 Transistor Specification

Transistor Code		IXFN360N15T2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	310A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	1070W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		715nC

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