IXFN320N17T2 MOSFET Transistor

The IXFN320N17T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN320N17T2 transistor as follows.

IXFN320N17T2 Transistor Specification

Transistor Code		IXFN320N17T2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	170V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	260A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0052Ohm
Power Dissipation (Maximum)	PD	1070W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		640nC

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