IXFN300N10P MOSFET Transistor

The IXFN300N10P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN300N10P transistor as follows.

IXFN300N10P Transistor Specification

Transistor Code		IXFN300N10P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	295A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	1070W
Operating Junction Temperature (Maximum)		175°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		279nC

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