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IXFN26N100P MOSFET Transistor

The IXFN26N100P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN26N100P transistor as follows.

Circuit diagram symbol of the IXFN26N100P transistor

IXFN26N100P Transistor Specification

Transistor Code IXFN26N100P
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT227B
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 23A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.39Ohm
Power Dissipation (Maximum) PD 595W
Operating Junction Temperature (Maximum) 150°C
Rise Time 300nS
Gate-Threshold Voltage (Maximum) 6.5V
Total Gate Charge 197nC

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