IXFN26N100P MOSFET Transistor

The IXFN26N100P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN26N100P transistor as follows.

IXFN26N100P Transistor Specification

Transistor Code		IXFN26N100P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.39Ohm
Power Dissipation (Maximum)	PD	595W
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		197nC

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