IXFN260N17T MOSFET Transistor

The IXFN260N17T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN260N17T transistor as follows.

IXFN260N17T Transistor Specification

Transistor Code		IXFN260N17T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-227
Drain-Source Voltage (Maximum)	VDS	170V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	245A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	1090W
Drain-Source Capacitance		2870pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		400nC

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