IXFN210N20P MOSFET Transistor

The IXFN210N20P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN210N20P transistor as follows.

IXFN210N20P Transistor Specification

Transistor Code		IXFN210N20P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	188A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	1070W
Operating Junction Temperature (Maximum)		175°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		255nC

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