IXFN200N10P MOSFET Transistor

The IXFN200N10P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN200N10P transistor as follows.

IXFN200N10P Transistor Specification

Transistor Code		IXFN200N10P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	680W
Operating Junction Temperature (Maximum)		175°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		235nC

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