IXFN180N25T MOSFET Transistor

The IXFN180N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN180N25T transistor as follows.

IXFN180N25T Transistor Specification

Transistor Code		IXFN180N25T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	164A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0129Ohm
Power Dissipation (Maximum)	PD	900W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		364nC

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