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IXFN180N15P MOSFET Transistor

The IXFN180N15P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN180N15P transistor as follows.

Circuit diagram symbol of the IXFN180N15P transistor

IXFN180N15P Transistor Specification

Transistor Code IXFN180N15P
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT227B
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 150A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.011Ohm
Power Dissipation (Maximum) PD 680W
Operating Junction Temperature (Maximum) 175°C
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 240nC

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