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IXFN140N25T MOSFET Transistor

The IXFN140N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN140N25T transistor as follows.

Circuit diagram symbol of the IXFN140N25T transistor

IXFN140N25T Transistor Specification

Transistor Code IXFN140N25T
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT227
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.017Ohm
Power Dissipation (Maximum) PD 690W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 255nC

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