IXFN102N30P MOSFET Transistor

The IXFN102N30P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFN102N30P transistor as follows.

IXFN102N30P Transistor Specification

Transistor Code		IXFN102N30P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	86A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	570W
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		224nC

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