IXFM6N100 MOSFET Transistor

The IXFM6N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFM6N100 transistor as follows.

IXFM6N100 Transistor Specification

Transistor Code		IXFM6N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO204
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	180W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		88nC

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