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IXFL80N50Q2 MOSFET Transistor

The IXFL80N50Q2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFL80N50Q2 transistor as follows.

Circuit diagram symbol of the IXFL80N50Q2 transistor

IXFL80N50Q2 Transistor Specification

Transistor Code IXFL80N50Q2
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS264
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 66A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.066Ohm
Power Dissipation (Maximum) PD 380W
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 250nC

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