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IXFL60N60 MOSFET Transistor

The IXFL60N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFL60N60 transistor as follows.

Circuit diagram symbol of the IXFL60N60 transistor

IXFL60N60 Transistor Specification

Transistor Code IXFL60N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS264
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 60A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 694W
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 380nC

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