IXFL100N50P MOSFET Transistor

The IXFL100N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFL100N50P transistor as follows.

IXFL100N50P Transistor Specification

Transistor Code		IXFL100N50P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS264
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	625W
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		240nC

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