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IXFK90N60X MOSFET Transistor

The IXFK90N60X is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFK90N60X transistor as follows.

Circuit diagram symbol of the IXFK90N60X transistor

IXFK90N60X Transistor Specification

Transistor Code IXFK90N60X
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-264P
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 90A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.038Ohm
Power Dissipation (Maximum) PD 1100W
Drain-Source Capacitance 6300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 22nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 210nC

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