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IXFK60N55Q2 MOSFET Transistor

The IXFK60N55Q2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFK60N55Q2 transistor as follows.

Circuit diagram symbol of the IXFK60N55Q2 transistor

IXFK60N55Q2 Transistor Specification

Transistor Code IXFK60N55Q2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO264
Drain-Source Voltage (Maximum) VDS 550V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 60A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.088Ohm
Power Dissipation (Maximum) PD 735W
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 200nC

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