IXFK60N55Q2 MOSFET Transistor

The IXFK60N55Q2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFK60N55Q2 transistor as follows.

IXFK60N55Q2 Transistor Specification

Transistor Code		IXFK60N55Q2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	550V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.088Ohm
Power Dissipation (Maximum)	PD	735W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		200nC

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