IXFK24N100Q3 MOSFET Transistor

The IXFK24N100Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFK24N100Q3 transistor as follows.

IXFK24N100Q3 Transistor Specification

Transistor Code		IXFK24N100Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-264
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.44Ohm
Power Dissipation (Maximum)	PD	1000W
Drain-Source Capacitance		590pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		140nC

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