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IXFK24N100 MOSFET Transistor

The IXFK24N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFK24N100 transistor as follows.

Circuit diagram symbol of the IXFK24N100 transistor

IXFK24N100 Transistor Specification

Transistor Code IXFK24N100
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO264
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.39Ohm
Power Dissipation (Maximum) PD 560W
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 5.5V
Total Gate Charge 267nC

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