IXFK150N30P3 MOSFET Transistor

The IXFK150N30P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFK150N30P3 transistor as follows.

IXFK150N30P3 Transistor Specification

Transistor Code		IXFK150N30P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-264
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	150A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	1300W
Drain-Source Capacitance		1910pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		197nC

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