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IXFK120N30T MOSFET Transistor

The IXFK120N30T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFK120N30T transistor as follows.

Circuit diagram symbol of the IXFK120N30T transistor

IXFK120N30T Transistor Specification

Transistor Code IXFK120N30T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO264
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.024Ohm
Power Dissipation (Maximum) PD 960W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 265nC

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