IXFJ26N50P3 MOSFET Transistor

The IXFJ26N50P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFJ26N50P3 transistor as follows.

IXFJ26N50P3 Transistor Specification

Transistor Code		IXFJ26N50P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.265Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		280pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		5V

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