IXFI7N80P MOSFET Transistor

The IXFI7N80P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFI7N80P transistor as follows.

IXFI7N80P Transistor Specification

Transistor Code		IXFI7N80P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.44Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		133pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		5V

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