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IXFH80N65X2 MOSFET Transistor

The IXFH80N65X2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH80N65X2 transistor as follows.

Circuit diagram symbol of the IXFH80N65X2 transistor

IXFH80N65X2 Transistor Specification

Transistor Code IXFH80N65X2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 890W
Drain-Source Capacitance 5510pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 42nS
Gate-Threshold Voltage (Maximum) 5.5V
Total Gate Charge 143nC

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