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IXFH80N08 MOSFET Transistor

The IXFH80N08 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH80N08 transistor as follows.

Circuit diagram symbol of the IXFH80N08 transistor

IXFH80N08 Transistor Specification

Transistor Code IXFH80N08
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 150°C
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 180nC

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