IXFH70N30Q3 MOSFET Transistor

The IXFH70N30Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH70N30Q3 transistor as follows.

IXFH70N30Q3 Transistor Specification

Transistor Code		IXFH70N30Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.054Ohm
Power Dissipation (Maximum)	PD	830W
Drain-Source Capacitance		880pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		98nC

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