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IXFH70N30Q3 MOSFET Transistor

The IXFH70N30Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH70N30Q3 transistor as follows.

Circuit diagram symbol of the IXFH70N30Q3 transistor

IXFH70N30Q3 Transistor Specification

Transistor Code IXFH70N30Q3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 70A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.054Ohm
Power Dissipation (Maximum) PD 830W
Drain-Source Capacitance 880pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS
Gate-Threshold Voltage (Maximum) 6.5V
Total Gate Charge 98nC

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