IXFH5N100P MOSFET Transistor

The IXFH5N100P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH5N100P transistor as follows.

IXFH5N100P Transistor Specification

Transistor Code		IXFH5N100P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.8Ohm
Power Dissipation (Maximum)	PD	250W
Rise Time		200nS
Total Gate Charge		33.4nC

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