IXFH58N20Q MOSFET Transistor

The IXFH58N20Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH58N20Q transistor as follows.

IXFH58N20Q Transistor Specification

Transistor Code		IXFH58N20Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	58A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		98nC

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