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IXFH50N60X MOSFET Transistor

The IXFH50N60X is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH50N60X transistor as follows.

Circuit diagram symbol of the IXFH50N60X transistor

IXFH50N60X Transistor Specification

Transistor Code IXFH50N60X
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.073Ohm
Power Dissipation (Maximum) PD 660W
Drain-Source Capacitance 3300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 62nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 116nC

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