IXFH50N60X MOSFET Transistor

The IXFH50N60X is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH50N60X transistor as follows.

IXFH50N60X Transistor Specification

Transistor Code		IXFH50N60X
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.073Ohm
Power Dissipation (Maximum)	PD	660W
Drain-Source Capacitance		3300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		62nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		116nC

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