IXFH320N10T2 MOSFET Transistor

The IXFH320N10T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH320N10T2 transistor as follows.

IXFH320N10T2 Transistor Specification

Transistor Code		IXFH320N10T2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	320A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	1000W
Operating Junction Temperature (Maximum)		175°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		430nC

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