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IXFH30N60Q MOSFET Transistor

The IXFH30N60Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH30N60Q transistor as follows.

Circuit diagram symbol of the IXFH30N60Q transistor

IXFH30N60Q Transistor Specification

Transistor Code IXFH30N60Q
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.23Ohm
Power Dissipation (Maximum) PD 500W
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 124nC

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