IXFH230N10T MOSFET Transistor

The IXFH230N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH230N10T transistor as follows.

IXFH230N10T Transistor Specification

Transistor Code		IXFH230N10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	230A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0047Ohm
Power Dissipation (Maximum)	PD	650W
Operating Junction Temperature (Maximum)		175°C
Rise Time		82nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		250nC

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