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IXFH18N90P MOSFET Transistor

The IXFH18N90P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH18N90P transistor as follows.

Circuit diagram symbol of the IXFH18N90P transistor

IXFH18N90P Transistor Specification

Transistor Code IXFH18N90P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.6Ohm
Power Dissipation (Maximum) PD 540W
Operating Junction Temperature (Maximum) 150°C
Rise Time 300nS
Gate-Threshold Voltage (Maximum) 6.5V
Total Gate Charge 97nC

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