IXFH18N100Q3 MOSFET Transistor

The IXFH18N100Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH18N100Q3 transistor as follows.

IXFH18N100Q3 Transistor Specification

Transistor Code		IXFH18N100Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.66Ohm
Power Dissipation (Maximum)	PD	830W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		90nC

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