IXFH15N80 MOSFET Transistor

The IXFH15N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH15N80 transistor as follows.

IXFH15N80 Transistor Specification

Transistor Code		IXFH15N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		4200pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		150nC

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