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IXFH13N80Q MOSFET Transistor

The IXFH13N80Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH13N80Q transistor as follows.

Circuit diagram symbol of the IXFH13N80Q transistor

IXFH13N80Q Transistor Specification

Transistor Code IXFH13N80Q
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 250W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 90nC

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