IXFH12N100P MOSFET Transistor

The IXFH12N100P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH12N100P transistor as follows.

IXFH12N100P Transistor Specification

Transistor Code		IXFH12N100P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.05Ohm
Power Dissipation (Maximum)	PD	463W
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		80nC

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