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IXFH110N15T2 MOSFET Transistor

The IXFH110N15T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH110N15T2 transistor as follows.

Circuit diagram symbol of the IXFH110N15T2 transistor

IXFH110N15T2 Transistor Specification

Transistor Code IXFH110N15T2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 110A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.013Ohm
Power Dissipation (Maximum) PD 480W
Operating Junction Temperature (Maximum) 175°C
Rise Time 85nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 150nC

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