IXFH10N100Q MOSFET Transistor

The IXFH10N100Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH10N100Q transistor as follows.

IXFH10N100Q Transistor Specification

Transistor Code		IXFH10N100Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AD
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		155nC

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