IXFE55N50 MOSFET Transistor

The IXFE55N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFE55N50 transistor as follows.

IXFE55N50 Transistor Specification

Transistor Code		IXFE55N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS227
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	52A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	500W
Operating Junction Temperature (Maximum)		150°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		330nC

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