IXFE23N100 MOSFET Transistor

The IXFE23N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFE23N100 transistor as follows.

IXFE23N100 Transistor Specification

Transistor Code		IXFE23N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS227
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.43Ohm
Power Dissipation (Maximum)	PD	500W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		250nC

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