IXFE180N10 MOSFET Transistor

The IXFE180N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFE180N10 transistor as follows.

IXFE180N10 Transistor Specification

Transistor Code		IXFE180N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS227
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	176A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	500W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		360nC

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