IXFB50N80Q2 MOSFET Transistor

The IXFB50N80Q2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFB50N80Q2 transistor as follows.

IXFB50N80Q2 Transistor Specification

Transistor Code		IXFB50N80Q2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS264
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	1135W
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		260nC

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