IXFB40N110Q3 MOSFET Transistor

The IXFB40N110Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFB40N110Q3 transistor as follows.

IXFB40N110Q3 Transistor Specification

Transistor Code		IXFB40N110Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS264
Drain-Source Voltage (Maximum)	VDS	1100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.26Ohm
Power Dissipation (Maximum)	PD	1560W
Drain-Source Capacitance		984pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		68nS
Gate-Threshold Voltage (Maximum)		6.5V
Total Gate Charge		300nC

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