IXFB210N30P3 MOSFET Transistor

The IXFB210N30P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFB210N30P3 transistor as follows.

IXFB210N30P3 Transistor Specification

Transistor Code		IXFB210N30P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS264
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	210A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0145Ohm
Power Dissipation (Maximum)	PD	1890W
Drain-Source Capacitance		2550pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		268nC

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